Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V DS
_
I SD
L
Driver
D = --------------------------
V GS
( Driver )
I SD
( DUT )
V GS
R G
Same Type
as DUT
? dv/dt controlled by R G
? I SD controlled by pulse period
Gate Pulse Width
Gate Pulse Period
I FM , Body Diode Forward Current
di/dt
V DD
10V
I RM
Body Diode Reverse Current
V DS
( DUT )
Body Diode Recovery dv/dt
V SD
Body Diode
Forward Voltage Drop
V DD
?2010 Fairchild Semiconductor Corporation
FCB20N60F Rev. C1
6
www.fairchildsemi.com
相关PDF资料
FCB20N60TM MOSFET N-CH 600V 20A D2PAK
FCB36N60NTM MOSFET N-CH 600V 36A D2PAK
FCD4N60TM_WS MOSFET N-CH 600V 3.9A DPAK
FCD5N60TF MOSFET N-CH 600V 4.6A DPAK
FCD7N60TF MOSFET N-CH 600V 7A DPAK
FCD9N60NTM MOSFET N-CH 600V 9A DPAK
FCH20N60 MOSFET N-CH 600V 20A TO-247
FCH22N60N MOSFET N-CH 600V 22A TO-247
相关代理商/技术参数
FCB20N60TM 功能描述:MOSFET HIGH_POWER RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCB20R22 制造商:TE Connectivity 功能描述:RESISTOR 2W 5% 0R22
FCB20R47 制造商:TE Connectivity 功能描述:RESISTOR 2W 5% 0R47
FCB2100R 制造商:TE Connectivity 功能描述:RESISTOR 2W 5% 100R
FCB2100RJ 功能描述:线绕电阻器 - 透孔 FCB2 100R 5% HP RoHS:否 制造商:Bourns 电阻:10 Ohms 容差:5 % 功率额定值:7 W 温度系数:200 PPM / C 系列:FW 端接类型:Axial 工作温度范围:- 55 C to + 155 C 尺寸:9.5 mm Dia. x 26 mm L 封装:Ammo 产品:Power Resistors Wirewound High Energy
FCB-210-50 制造商:Struthers-Dunn 功能描述:
FCB-210-64 功能描述:通用继电器 RoHS:否 制造商:Omron Electronics 触点形式:1 Form A (SPST-NO) 触点电流额定值:150 A 线圈电压:24 VDC 线圈电阻:144 Ohms 线圈电流:167 mA 切换电压:400 V 安装风格:Chassis 触点材料:
FCB210C7R 制造商:STRUTHERS 功能描述:RELAY